| 摘要 |
In a thin-film infrared sensor, (100)-oriented semiconductor substrate is used for the sensor fabrication. A surface of the substrate is partially masked to provide an unmasked section where a concave is made and a masked section on the back side of an alley between thin-film sensing areas. An anisotropic etching using an etchant such as KOH is applied to the masked substrate to make the concave (the thin-film sensing areas) and to provide an unetched portion of the substrate at the bottom of the concave on the back side of the alley between the sensing areas. The unetched portion of the substrate makes a rim to support the sensing areas. High concentration Boron doping is not necesarry. Thus, it is possible to reduce deformation of thin-film sensing areas caused by a stress in the rim and to reinforce the rim.
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