Chain ferroelectric random access memory (CFRAM) arrangement, has memory cells and complementary memory cells arranged in different memory cell matrices

摘要

A chain-FRAM (CFRAM) includes a read-amplifier with bit-lines (BLt) connected to it, word-lines (WL) connected to the gates of selection transistors, a plate line (PLt) connected to the ends of the blocks of cells (Z) opposite the block-select transistors (BSt), complementary bit-lines (BLc) connected to the read-amplifier (SA), and complementary word-lines, complementary selection transistors, and complementary plate-lines (PLt). The bit-lines and the complementary bit-lines, and the memory cells (Z) and complementary memory cells connected to them, are arranged into two different memory cell matrices/fields (8,9), and the bit-line and the complementary bit-lines specifically extend in mutually opposite directions.