CHEMICAL MECHANICAL POLISHING SLURRY COMPOSITION AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE USING THE SAME

摘要

PURPOSE: A chemical mechanical polishing(CMP) slurry composition is provided to prevent a defect of an interlayer dielectric and damage to an active region in a shallow trench isolation(STI) process, by controlling an agglomeration phenomenon caused by variation of outer circumstances and aging. CONSTITUTION: The CMP slurry composition includes a polishing article, tetramethyl ammonium hydroxide(TMAH), a phosphate-based anionic additive, a fluorine compound and deionized wafer. The TMAH is 0.01-5 weight percent. The phosphate-based anionic additive is 0.01-3 weight percent. The polar group of the phosphate-based anionic additive is mono phosphate or di phosphate.