发明名称 |
Method and apparatus for multiple byte or page mode programming and reading of a flash memory array |
摘要 |
A memory array contains memory cells designed to be erased using Fowler-Nordheim ("FN") tunneling through the channel area, and programmed using either channel hot electron injection ("CHE") or channel-initiated secondary electron injection ("CISEI"). To reduce disturbance of the floating gate potential of unselected memory cells during programming operations and read operations, the unselected word lines are brought to a negative potential rather than ground potential. To reduce disturbance of the floating gate potential of unselected memory cells during FN erase operations, the unselected word lines are brought to a positive potential rather than ground potential.
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申请公布号 |
US2002167843(A1) |
申请公布日期 |
2002.11.14 |
申请号 |
US20010035414 |
申请日期 |
2001.11.08 |
申请人 |
NEXFLASH TECHNOLOGIES, INC. |
发明人 |
HSIA STEVE K.;HAN KYUNG JOON;TRAN DUNG |
分类号 |
G11C8/08;G11C16/08;G11C16/10;G11C16/16;(IPC1-7):G11C11/34 |
主分类号 |
G11C8/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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