发明名称 Method of manufacturing a semiconductor integrated circuit device
摘要 Decreasing foreign materials adhering to a semiconductor substrate to improve a yield and decreasing handling errors for the semiconductor substrate to improve an operating ratio of the semiconductor manufacturing apparatus. A sealed type container accommodating a semiconductor substrate is positioned to a load port of a semiconductor manufacturing apparatus. These miconductor substrate is taken out of the container. An ionizer is used for static-eliminating the semiconductor substrates before and after process treatment in a transport area between the load port and a treatment section. The static-eliminated semiconductor substrate is accommodated in the container positioned to the load port. Thus, it is possible to decrease foreign materials adhering to the semiconductor substrate and errors in handling the semiconductor substrate.
申请公布号 US2002045328(A1) 申请公布日期 2002.04.18
申请号 US20010941835 申请日期 2001.08.30
申请人 KOBAYASHI YOSHIAKI 发明人 KOBAYASHI YOSHIAKI
分类号 H01L21/02;H01L21/027;H01L21/673;H01L21/677;(IPC1-7):H01L21/322 主分类号 H01L21/02
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