发明名称 |
PROCESS FOR ETCHING A SILICON WAFER |
摘要 |
A process for etching a silicon wafer is disclosed in which the oxidizing agent of the aqueous etching solution is reconditioned or regenerated by re-oxidation, rather than simply adding fresh reagent. The present process affords the means by which to more consistently obtain a silicon wafer having improved gloss or smoothness, while minimizing the amount of silicon removed from the wafer surface.
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申请公布号 |
WO0072368(A9) |
申请公布日期 |
2002.04.18 |
申请号 |
WO2000US12481 |
申请日期 |
2000.05.05 |
申请人 |
MEMC ELECTRONIC MATERIALS, INC. |
发明人 |
STEFANESCU, ANCA;SCHMIDT, JUDY;ERK, HENRY, F.;DOANE, TOM |
分类号 |
H01L21/306;(IPC1-7):H01L21/306 |
主分类号 |
H01L21/306 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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