发明名称 PROCESS FOR ETCHING A SILICON WAFER
摘要 A process for etching a silicon wafer is disclosed in which the oxidizing agent of the aqueous etching solution is reconditioned or regenerated by re-oxidation, rather than simply adding fresh reagent. The present process affords the means by which to more consistently obtain a silicon wafer having improved gloss or smoothness, while minimizing the amount of silicon removed from the wafer surface.
申请公布号 WO0072368(A9) 申请公布日期 2002.04.18
申请号 WO2000US12481 申请日期 2000.05.05
申请人 MEMC ELECTRONIC MATERIALS, INC. 发明人 STEFANESCU, ANCA;SCHMIDT, JUDY;ERK, HENRY, F.;DOANE, TOM
分类号 H01L21/306;(IPC1-7):H01L21/306 主分类号 H01L21/306
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