发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND PROCESS FOR MANUFACTURING THE SAME |
摘要 |
In a process for manufacturing a semiconductor integrated circuit device having a MISFET, in order that a shallow junction between the source/drain of the MISFET and a semiconductor substrate may be realized by reducing the number of heat treatment steps, all conductive films to be deposited on the semiconductor substrate are deposited at a temperature of 500° C. or lower at a step after the MISFET has been formed. Moreover, all insulating films to be deposited over the semiconductor substrate are deposited at a temperature of 500° C. or lower at a step after the MISFET has been formed. |
申请公布号 |
US2002045309(A1) |
申请公布日期 |
2002.04.18 |
申请号 |
US19990416959 |
申请日期 |
1999.10.13 |
申请人 |
YOSHIDA MAKOTO;KUMAUCHI TAKAHIRO;TADAKI YOSHITAKA;KAJIGAYA KAZUHIKO;AOKI HIDEO;ASANO ISAMU |
发明人 |
YOSHIDA MAKOTO;KUMAUCHI TAKAHIRO;TADAKI YOSHITAKA;KAJIGAYA KAZUHIKO;AOKI HIDEO;ASANO ISAMU |
分类号 |
H01L21/265;H01L21/3205;H01L21/324;H01L21/336;H01L21/60;H01L21/768;H01L21/8238;H01L21/8239;H01L21/8242;H01L27/108;(IPC1-7):H01L21/824;H01L21/44;H01L21/476 |
主分类号 |
H01L21/265 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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