| 摘要 |
PURPOSE: A method for fabricating an elastomer layer pattern on a wafer is provided to prevent a characteristic of a semiconductor device from being deteriorated and to form a thick film which is not easily fabricated by a conventional spin coating method, by forming the elastomer layer having a uniform thickness on the wafer. CONSTITUTION: An upper cover(11a) attached to the upper surface of the elastomer layer(11) is peeled off. The elastomer is sawed to a wafer type. The elastomer layer sawed to a wafer type is vacuum-absorbed by using a transfer apparatus(16) while a lower cover(11b) attached to the lower surface of the elastomer layer. The elastomer layer vacuum-absorbed to the transfer apparatus is placed on the wafer. The elastomer layer is attached to the wafer by using a heated roller(13). The elastomer layer is patterned.
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