METHOD FOR GROWING EPI-LAYER AND METHOD FOR FABRICATING TRANSISTOR USING THE SAME

摘要

PURPOSE: A method for growing an epi-layer is provided to control a lateral growth of an epi-layer by repeating a process for growing the epi-layer and a bake process dozens of times, and to improve planarization by growing the epi-layer so that the epi-layer has the same height as a gate electrode. CONSTITUTION: After a semiconductor substrate(11) is cleaned, a bake process is performed. The semiconductor substrate is loaded to the inside of a reaction furnace. Reaction gas is supplied to the inside for the reaction furnace. After a predetermined thickness of the epi-layer(16) is grown on the semiconductor substrate exposed by a selective growth process, a bake process is performed. The reaction gas supply process and a process for growing the epi-layer are repeated to form the epi-layer of a desired thickness.