| 摘要 |
An interconnect structure of a semiconductor device includes a tungsten plug ( 14 ) deposited in a via or contact window ( 11 ). A barrier layer ( 15 ) separates the tungsten plug ( 14 ) from the surface of a dielectric material ( 16 ) within which the contact window or via ( 11 ) is formed. The barrier layer ( 15 ) is a composite of at least two films. The first film formed on the surface of the dielectric material ( 16 ) within the via ( 11 ) is a tungsten silicide film ( 12 ). The second film is a tungsten film ( 13 ) formed on the tungsten silicide film ( 12 ). A tungsten plug ( 14 ) is formed on the tungsten film ( 13 ) to complete interconnect structure. The barrier layer ( 15 ) is deposited using a sputtering technique performed in a deposition chamber. The chamber includes tungsten silicide target ( 19 ) from which the tungsten silicide film ( 12 ) is deposited, and a tungsten coil ( 20 ) from which the tungsten film ( 20 ) is deposited. |
