发明名称 Semiconductor device with DRAM and logic part integrated
摘要 An LSI on which a DRAM is mounted together with a logic part, which does not require the level shifter control signal so as to simplify the circuit configuration and reduces power consumption. This LSI includes a level shifter 3 and an interface circuit 5. The level shifter 3 converts the operation voltage level of the DRAM control signal and input data output from the logic part 2 operating with a low voltage power supply, and outputs the DRAM control signal to a DRAM 6. The interface circuit 5 controls the input data output from the level shifter 3 and the output data output from the DRAM 6 by an interface control signal supplied from the DRAM 6, outputs the input data into the DRAM 6 and outputs the output data to the external data output terminal and the logic part.
申请公布号 US6373773(B2) 申请公布日期 2002.04.16
申请号 US20000733270 申请日期 2000.12.08
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 SUMIMOTO YOSHIHIKO
分类号 G11C11/401;G06F15/78;G11C7/10;G11C11/4093;H01L21/822;H01L27/04;H03K19/0175;(IPC1-7):G11C7/00 主分类号 G11C11/401
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