| 摘要 |
By using an InP single crystal substrate of the present invention in which the oxygen atom concentration is within the range of 1x1017 to 1x1018 atoms/cm3 for vapor phase epitaxial growth such as the MOCVD method, the occurrence of protrusions referred to as hillocks on the surface of the epitaxial layer formed on the substrate can be reduced, thereby allowing the providing of an InP single crystal substrate able to accommodate reduced thickness, multi-layering and enhanced function of the epitaxial layer. |
