| 摘要 |
PURPOSE: A method for fabricating a TFT-LCD(Thin Film Transistor-Liquid Crystal Display) is provided to eliminate a half tone mask so that process reliability is enhanced, and to arrange ITO(Indium-Tin-Oxide) materials of a pixel electrode in a lowest part so that an attack of a lower layer caused by an ITO etchant is prevented. And the method is provided to remove a gate insulating layer and a protective layer of a pixel area, so that optical transmissivity is enhanced. CONSTITUTION: A transparent metallic layer for pixel electrode and a metallic layer for gate are sequentially deposited on a transparent insulating substrate(1). The layers are patterned with a first mask process, to form a gate line(3a) and a pixel electrode(2a). A SiN.sub.x layer, an a-Si layer and an n.sup.+a-Si layer(6) are sequentially deposited thereon. The layers are patterned with a second mask process, to form a semiconductor layer(5a), an active line, and a gate insulating layer. The metallic layer for gate remaining in the pixel electrode(2a) is removed. A metallic layer for source/drain is deposited thereon. The metallic layer for source/drain is patterned with a third mask process, to form a data line including source/drain electrodes(7a,7b). The n.sup.+a-Si layer(6) between the source and drain electrodes(7a,7b) is etched to form an ohmic contract layer. A protective layer(11) is deposited thereon. And the protective layer(11) is patterned with a fourth mask process, to remove a part of the protective layer(11) on a pixel area.
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