METHOD FOR FABRICATING THIN FILM TRANSISTOR

摘要

PURPOSE: A method for fabricating a TFT(Thin Film Transistor) is provided to use a doping method for a catalytic metal to a surface of amorphous silicon, to make the catalytic metal distributed on the surface of the amorphous silicone by having regular thickness and crystallized, so as to get a crystal active layer having an improved electrical characteristic. CONSTITUTION: A substrate(111) is arranged. A gate electrode(150) is formed on a predetermined position on the substrate(111). An insulating layer(152) is formed on a front surface of the substrate(111) in which the gate electrode(150) is formed. A purity amorphous silicon layer(154) and an impurity amorphous silicon layer(156) are accumulated on the insulating layer(152). A catalytic metal is ion-doped on a surface of the impurity amorphous silicon layer(156). The catalytic metal crystallizes the ion-doped amorphous silicon using a predetermined unit, to form purity crystal silicone and impurity crystal silicon. A source and a drain electrodes are formed on an upper part of the impurity amorphous silicon layer(156). Impurity polycrystal silicon located between the source and drain electrodes is etched with mask of the source and drain electrodes.