发明名称 MAGNETO-RESISTIVE DEVICE AND/OR MULTIPLE ELEMENT MAGNETO-RESISTIVE DEVICE
摘要 PURPOSE: A magneto-resistive device and a multiple element magneto-resistive device are provided to adjust the bias magnetic field applied to the vertical current type magneto-resistive element by the magneto-resistive element and the multiple element magneto-resistive device with simple structure. CONSTITUTION: A magneto-resistive element(100) includes a vertical current type magneto-resistive element(101); a first conductor(102) for causing a current to flow into the vertical current type magneto-resistive element; and a second conductor(103) for causing the current to flow out of the vertical current type magneto-resistive element. The first conductor generates a first magnetic field based on the current. The second conductor generates a second magnetic field based on the current. The first conductor and the second conductor are located, and the first magnetic field and the second magnetic field act as the bias magnetic field applied on the vertical current type magneto-resistive element.
申请公布号 KR20020027277(A) 申请公布日期 2002.04.13
申请号 KR20010061513 申请日期 2001.10.05
申请人 MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. 发明人 HIRAMOTO MASAYOSHI;IIJIMA KENJI;MATSUKAWA NOZOMU;ODAGAWA AKIHIRO;SAKAKIMA HIROSHI
分类号 G01R33/09;G11B5/39;G11C11/14;G11C11/15;H01F10/32;H01L21/8246;H01L27/105;H01L27/22;H01L43/08;(IPC1-7):G11B5/39 主分类号 G01R33/09
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