| 摘要 |
<p>PROBLEM TO BE SOLVED: To solve the problems of an oxidation of a surface of a film in a later step when an Ag alloy film is used as a gate metal film of an amorphous silicon thin film transistor in the steps of manufacturing the thin film transistor. SOLUTION: A method for manufacturing the thin film transistor comprises the steps of laminating an SiNx, Ti, Ta or MoW on the gate metal Ag alloy film, and then simultaneously forming patterns by dry etching. Thus, a gate electrode made of the Ag alloy film is not carbonized in the step of exposing the electrode with an ashing step after the electrode is formed or exposing an oxygen plasma thereafter. Accordingly, the yield of the thin film transistor is improved without raising its resistance value.</p> |
