SEMICONDUCTOR MEMORY AND ITS DRIVING METHOD

摘要

PROBLEM TO BE SOLVED: To improve retention characteristics of a semiconductor memory having a ferroelectric capacitor storing data by the deviation of the polarization of a ferroelectric film. SOLUTION: The memory cell is composed of the ferroelectric capacitor 30 which stores data by the deviation of the polarization of the ferroelectric film and a selection transistor 20 which is connected to the ferroelectric capacitor 30 in parallel. A readout transistor 10 which reads data out by detecting the deviation of the polarization of the ferroelectric film of a selected ferroelectric capacitor 30 is connected to one end of a series circuit constituted by connecting multiple ferroelectric capacitors 30 successively in a bit-line direction and a memory cell block is composed of multiple ferroelectric capacitors 30, selection transistors 20, and one readout transistor 10.