| 摘要 |
PROBLEM TO BE SOLVED: To provide a thermal processing method for a silicon wafer where, with the use of a thermal process using an RTA device, a slip transition is suppressed, even if a silicon wafer whose diameter is 300 mm or larger, an oxygen deposit is formed which is a sufficient gettering site in a device manufacturing process, and no unwanted film will be formed on the wafer surface after the thermal process, and no additional process is required. SOLUTION: A silicon wafer, manufactured using Czochralski method is thermally processed, using a quick heating/quick cooling device. Here, the silicon wafer is thermally processed in a mixed gas atmosphere of nitrogen and argon, with 1-50 vol.% nitrogen at 1,150-1,350 deg.C for 1-60 seconds.
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