| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor storage device having a connection hole where a metal wiring and a conductive layer can be surely connected, and to provide its manufacturing method. SOLUTION: An interlayer-insulating film 24 is deposited on a silicon substrate 11 on which MOS transistors 13, 14 are formed, and plugs 26, 27 are formed in a memory cell region Rmemo. A part of the interlayer-insulating film 24 over a region on which the plugs 26, 27 are not formed is eliminated, and a step-difference is formed on the interlayer-insulating film 24. Thereby a part, which is deepened by the amount of the step-difference from the surface of an interlayer-insulating film 58 is formed on a plate electrode 48 formed on the memory cell region Rmemo. When connection holes 66, 68, 70 which reach a part which is formed, penetrating the insulating film 58, at a position in the plate electrode 48 which position is deepened by the amount of the step- difference from the surface of the insulating film 58, a gate wiring 16b and heavily-doped source/drain regions 54, 56, respectively are opened simultaneously, the connection hole 66 is prevented from penetrating the plate electrode 48. |
