发明名称 SUBSTRATE PROCESSOR AND PROCESSING METHOD THEREFOR
摘要 PROBLEM TO BE SOLVED: To provide a substrate processor and the processing method therefor which so activate a substrate processing gas by heated heat sources as to process a substrate and can prevent the substrate from being contaminated by metals. SOLUTION: The substrate processor has a reaction chamber 10 for processing a substrate 41, process-gas feeding means 11, 12, 13 for feeding a process gas into the reaction chamber 10, and heat sources 20 for activating the process gas to generate active species in it. Each heat source 20 has a heat-source element 21 and a into a space surrounded by the heat-resistant material 22 or make it flow through the space.
申请公布号 JP2002110558(A) 申请公布日期 2002.04.12
申请号 JP20000298463 申请日期 2000.09.29
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 TANIGUCHI TAKESHI
分类号 C23C16/452;H01L21/205;H01L21/302;H01L21/306;(IPC1-7):H01L21/205 主分类号 C23C16/452
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