| 摘要 |
PROBLEM TO BE SOLVED: To solve a problem that adjacent bit lines are short-circuited through a metal which goes into a void, if a contact passes through the void formed between word lines in a flash memory type semiconductor device, having a multilayer interconnection structure wherein voids are formed in an interlayer insulating film to reduce the parasitic capacitances between interconnections. SOLUTION: Contacts 12 can be formed in the interlayer insulating film 10, to connect a diffusion layer 7 with bit lines 32 as intersecting voids 11 by forming a sidewall insulating film 14 on the inner wall of the contacts 12, a short circuit between bit lines 32 through contacts 12 can be eliminated, and parasitic capacitance between word lines can be reduced as well. |
