发明名称 SIMULATOR AND SIMULATING METHOD OF CIRCUIT CHARACTERISTICS OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a simulation method for predicting variation in the circuit characteristics due to variation in the production process of semiconductor devices with high accuracy at a high rate. SOLUTION: Frequency distribution of variation in the production process of semiconductor devices is inputted and a first characteristic value in the characteristics of a device constituting a semiconductor device subjected to most significant variation is determined by Monte Carlo analysis. Variation width of the production process is then determined such that a second characteristic value in the characteristics of the device in the worst case matches the first characteristic value. Finally, a third characteristic value in the circuit characteristics of the semiconductor device in the worst case is determined.
申请公布号 JP2002110489(A) 申请公布日期 2002.04.12
申请号 JP20000292770 申请日期 2000.09.26
申请人 TOSHIBA CORP 发明人 YAMAGUCHI TETSUYA
分类号 H01L21/00;G06F17/50;(IPC1-7):H01L21/00 主分类号 H01L21/00
代理机构 代理人
主权项
地址
您可能感兴趣的专利