| 摘要 |
PROBLEM TO BE SOLVED: To provide a nitrogen-added silicon semiconductor substrate, in which metal contamination of the substrate is easily evaluated for higher cleanliness level, while the manufacture yield of a device remains satisfactory. SOLUTION: The silicon semiconductor substrate is provided, which is manufactured from a silicon single crystal grown using Czochralski method or Czochralski method under magnetism. The substrate comprises a nitrogen content [N](atoms/cm3) and oxygen content [O](atoms/cm3) by 1×1012<=[N]<=2×1016 and 5×1017<=[O]<=11×1017. The minor carrier diffusion length of the substrate is 300μm or larger, when measured by SPV(surface photo voltage) method.
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