发明名称 METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To improve yield of semiconductor device. SOLUTION: In a method for manufacturing a semiconductor device, on the principal surface of a substrate a plurality of semiconductor chips which are mounted at prescribed intervals from a first edge of the principal surface toward a second edge opposing the first edge are disposed inside a cavity, or a forming mold with the substrate. Then, a step is provided, where a resin is injected inside the cavity from the first edge toward the second edge of the principal surface on the substrate to form a resin encapsulant for encapsulating the plurality of the semiconductor chips in batch, and additionally a step is provided where a cleaning process is conducted on the principal surface of the substrate, before the step of forming the resin encapsulant.
申请公布号 JP2002110721(A) 申请公布日期 2002.04.12
申请号 JP20000301952 申请日期 2000.10.02
申请人 HITACHI LTD;HITACHI HOKKAI SEMICONDUCTOR LTD 发明人 GOTO MASAKATSU;KASAI NORIHIKO
分类号 H01L25/18;B29C45/14;H01L21/56;H01L25/065;H01L25/07 主分类号 H01L25/18
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