| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device for which it is easy to blow a fuse, and to control a film thickness of an insulation film on the fuse. SOLUTION: The semiconductor device comprises a plurality of copper interconnection layers, consisting of metal containing copper as a main component, a top upperlayer interconnection layer disposed on the copper interconnection layer and at least including a refractory metal film connected to the copper layer, a surface-protecting film disposed on the top upperlayer interconnection layer, a substrate metal film (barrier metal) for bumps disposed on the surface protecting film and connected to the top upperlayer interconnection layer and solder balls placed on the barrier metal, and a fuse, which can be cut by an energy beam, is at least formed in the top upperlayer. It is thus not necessary to etch the surface protecting film on the fuse in advance prior to blowing of the fuse, so that a range of film thickness which is proper and will not obstruct blowing of the fuse will remain. |
