发明名称 METHOD OF EVALUATING CONTACT CHARACTERISTICS OF SEMICONDUCTOR DEVICED
摘要 PROBLEM TO BE SOLVED: To provide a method of evaluating contacts of a semiconductor device, capable of evaluating contact characteristics with high reliability by forming the as many contacts for evaluation as possible, corresponding to the contacts of an IC, and by evaluating them individually. SOLUTION: When the contact characteristics of the semiconductor device are evaluated by forming contact elements 1 for evaluation on the semiconductor wafer, making electrical current I flow into the contact elements 1 for the evaluation, and measuring voltage of both ends, each of contact elements 1 for evaluation is connected to selecting elements 2, 3, which formed so as to be able to select an object of the electric current application; and the voltage measurement, and each of contact elements 1 for evaluation is selected by this selecting elements 2, 3 in turn, and the characteristics are inspected, and by using the distribution of the characteristics, the contact characteristics of the semiconductor device are evaluated.
申请公布号 JP2002110753(A) 申请公布日期 2002.04.12
申请号 JP20000302297 申请日期 2000.10.02
申请人 ROHM CO LTD 发明人 IZUMI NAOKI;TAGUCHI MASAHIKO;AKIYAMA MASUKUNI
分类号 G01R31/28;H01L21/3205;H01L21/66;H01L23/52;(IPC1-7):H01L21/66;H01L21/320 主分类号 G01R31/28
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