| 摘要 |
PROBLEM TO BE SOLVED: To provide a thermal process method for an SOI, together with its manufacturing method where HF defect caused by metal contamination is reduced at a relatively low cost, for reduced HF defect density of the SOI. SOLUTION: A thermal process S2 is provided, where the SOI is thermally processed at a temperature equal to or higher than the melting point (for example 993 deg.C) of a semiconductor metal compound (for example, nickel silicide) comprising a semiconductor material and a metal, which constitute a crystal semiconductor of the SOI while being equal to or lower than the melting point of the semiconductor material. After the thermal processing, the temperature is lowered with the temperature drop rate being 0.12 deg.C/second or higher at the melting point or below of the semiconductor metal compound, while at the generating temperature (for example 75 deg.C) or higher than that of the semiconductor metal compound.
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