| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a semiconductor device manufacturing method which can suppress a leak current. SOLUTION: The semiconductor device has an element isolation 301 formed by locally oxidizing a surface layer of a substrate 1. The element isolation 301 is made thick locally in a prescribed region having elements A, B which are driven by the same voltage. This thickened portion 301a of the isolation 301 is a portion, where the elements A, B formed within the prescribed regions are apt to cause leakage currents and, for example, is a portion on which the edge of a gate electrode 5 is mounted.
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