发明名称 PLATING SYSTEM WITH REMOTE SECONDARY ANODE FOR SEMICONDUCTOR MANUFACTURING
摘要 <p>The present invention provides an electroplating system (50) for semiconductor wafers (66) including a plating chamber (52) connected by a circulating system (52, 56, 58) to a plating solution reservoir (60). The semiconductor wafer (66) is used as the cathode with an inert primary anode (64) in the plating chamber (52). A consumable remote secondary anode (75) in the plating solution reservoir (60) provides the metal ions for plating.</p>
申请公布号 WO2002029875(A2) 申请公布日期 2002.04.11
申请号 US2001018229 申请日期 2001.06.04
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