发明名称 |
Semiconductor raised source-drain structure |
摘要 |
A semiconductor structure which includes a raised source and a raised drain. The structure also includes a gate located between the source and drains. The gate defines a first gap between the gate and the source and a second gap between the gate and the drain.
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申请公布号 |
US2002042188(A1) |
申请公布日期 |
2002.04.11 |
申请号 |
US20010008652 |
申请日期 |
2001.11.09 |
申请人 |
GONZALEZ FERNANDO;MOULI CHANDRA |
发明人 |
GONZALEZ FERNANDO;MOULI CHANDRA |
分类号 |
H01L21/285;H01L21/336;H01L21/768;H01L23/522;H01L29/417;H01L29/49;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/285 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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