| 摘要 |
<p>A high purity zirconium or hafnium which is extremely reduced in the contents of an alkali metal such as Na or K, a radioactive element such as U or Th, a transition metal or heavy metal or high melting point metal such as Fe, Ni, Co, Cr, Cu, Mo, Ta or V, and a gas forming element such as C or O; and a method for producing a high purity zirconium or hafnium which allows the production thereof at a low cost; and a method for producing a powder of high purity zirconium or hafnium with safety and at a low cost which comprises using a hydrogenated high purity zirconium or hafnium as a material. The high purity zirconium or hafnium is greatly reduced in the contents of impurities which are obstacles to assurance of operational functions of a semiconductor.</p> |
