| 摘要 |
PURPOSE: A method for forming a metal line is provided to be capable of minimizing generation of hot carrier and reflectance of metal by using a PSG(Phospho Silicate Glass) layer and a PECVD(Plasma Enhanced CVD) oxide layer. CONSTITUTION: An insulating layer(20) is formed on a semiconductor substrate(10). A PSG layer(30) having a dangle bond structure is formed on the insulating layer. A contact hole for a metal line is formed by selectively etching the PSG layer(30) and the insulating layer(20). A metal film(50) and a PECVD oxide layer(60) having a dangle bond structure are sequentially formed on the resultant structure. A metal line is formed by selectively etching the PECVD oxide layer(60) and the metal film(50). A passivation layer(70) is formed on the resultant structure.
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