TARGET OF ZINC SULFIDE-SILICON DIOXIDE SINTERED COMPACT, AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a target of zinc sulfide-silicon dioxide sintered compact by which high film deposition rate can be attained without excessively increasing applied electric power and the occurrence of problems such as cracking can be practically prevented and further the content of impurities remaining in the inner part can be reduced and also to provide its manufacturing method. SOLUTION: The target of zinc sulfide-silicon dioxide has a composition consisting of 70-90 mole % ZnS and the balance SiO2 with inevitable impurities. Moreover, the peak intensity ratio of the X-ray diffraction chart showing the crystal structure of ZnS constituting this target satisfies the inequality: 0<=I (w100)-/(I(zb111)+I(w002))<=0.2 [wherein, I(w100) is the intensity of the (100) diffraction peak of wurtzite structure; I(w002) is the intensity of the (002) diffraction peak of wurtzite structure; I(zb111) is the intensity of the (111) diffraction peak of zincblende structure; and (I(zb111)+I(w002)) is the overlappingly observed intensities of the diffraction peaks].