| 摘要 |
A buried wiring line is formed without dishing using damascene and chemical mechanical polishing (CMP) processes. A key feature is the use of a first and a second pressure unit. The first pressure unit (15) has an airbag (18). The bag (18) is large in elastic deformation, and used to urge a copper film (5) of a silicon substrate (1) against a polishing pad (12) onto which a polishing liquid is supplied while the pad (12) is rotated, so that the copper film (5) is polished. The copper film (5) has been formed on the surface of the silicon substrate (1) through a barrier metal film (4). After polishing of the copper film (5), the silicon substrate (1) is transferred to the second pressure unit (25). The unit (25) has a metal plate (20). The plate (20) is small in deformation and used to urge the exposed barrier metal film (4) against the polishing pad (12) onto which the polishing liquid is supplied while the pad (12) is rotated, so that the barrier metal film (4) is polished to form the buried wiring line without dishing. |
