| 摘要 |
PROBLEM TO BE SOLVED: To improve yield when mounted, achieve cost reduction and improve external luminance efficiency. SOLUTION: This P-N junction type light-emitting diode has a P-N junction structure, constituted of an N-type and a P-type semiconductor layers which are formed on a substrate having light transparency. The light-emitting diode is provided with an ohmic electrode which is arranged on an upper surface of the P-N junction structure and constituted of a metal film, having optical transparency and an ohmic electrode which is arranged on a substrate surface opposite to the substrate surface on which the P-N junction structure is laminated and whose area is smaller than that of the substrate surface. |
