发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To improve precision of aligning to the pattern under multiple exposure. SOLUTION: In this method of manufacturing a semiconductor device by projecting a mask pattern that is formed on a mask to copy to an object and pattern forming into the object, the mask consists of plural masks having different mask patterns, and marks that are formed into each mask are synthesized to form a mark pattern that consists of plural marks into the object. The mask consists of plural masks for multiple exposure, into each of which at least one mark is formed, the mark pattern that consists of the marks of each mask is formed on a substrate plate, mask alignment in the succeeding processes using this mark pattern, and the pattern is formed by copying the mask pattern that is formed on the mask into the semiconductor substrate. Thus, it becomes possible to align each mask to be used for multiple exposure.</p>
申请公布号 JP2002100557(A) 申请公布日期 2002.04.05
申请号 JP20000291430 申请日期 2000.09.26
申请人 HITACHI LTD 发明人 IMAI AKIRA;HASEGAWA NORIO
分类号 G03F1/30;G03F1/68;G03F9/00;H01L21/027;(IPC1-7):H01L21/027;G03F1/08 主分类号 G03F1/30
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