| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device excellent in micronization. SOLUTION: There are provided a trench 3 formed in an element separation region which is so formed as to enclose an element formation region on a semiconductor substrate 1, and insulating films 4 and 5 which, formed with the same width as a trench width on the trench 3, form a void 50 in the trench 3.
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