| 摘要 |
A metal programmable ROM is disclosed that includes a memory cell array having a depth that is defined by a plurality of wordlines and a width that is defined by a plurality of bitlines. In addition, a group of memory cells are coupled between a bitline and ground, with each memory cell in the memory cell group coupled to at least one other memory cell in the memory cell group. Finally, a programmed memory cell is included that is defined by a memory cell transistor having its terminals shorted together.
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