| 摘要 |
A method for forming an inner capacitor of a semiconductor device. The method comprises steps of forming an interlayer insulation layer over a semiconductor substrate, wherein a plurality of layers to form semiconductor transistors are formed on the semiconductor substrate; forming a SACVD oxide layer on the interlayer insulation layer; forming contact holes for charge storage electrodes and bit lines by selectively etching the SACVD oxide layer and the interlayer insulation layer; forming contact plugs in the contact holes, thereby forming a resulting structure; forming a SACVD sacrifice oxide layer on the resulting structure; selectively etching the SACVD sacrifice oxide layer and exposing top surfaces of the contact plugs; forming a conducting layer electrically connected to the contact plugs; separating the conducting layer into a plurality of charge storage electrodes; and removing the SACVD sacrifice oxide layer.
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