HEMISPHERICAL GRAIN CAPACITOR AND METHOD FOR FABRICATING THE SAME

摘要

PURPOSE: A hemispherical grain capacitor and a method for fabricating the same are provided to prevent degradation of electrical characteristic and obtain high capacitance by forming a capacitor of a hemispherical grain structure. CONSTITUTION: An interlayer dielectric(100) is formed on a semiconductor substrate. A contact plug(110) is formed by depositing and planarizing a conductive layer. An insulating layer pattern is formed by laminating and etching an oxide layer. An amorphous silicon layer(130) is laminated on a whole surface of the semiconductor substrate. A plasma process is performed on the amorphous silicon layer(130). A hemispherical grain formation prevention layer and a nitride layer are formed thereon. The hemispherical grain formation prevention layer, the nitride layer, and the amorphous silicon layer(130) are removed by using a chemical mechanical polishing method or an etch back method. The exposed insulating layer pattern is removed. A hemispherical grain layer(170) is formed on the amorphous silicon layer(130). A capacitor is completed by forming a dielectric layer(180) and an upper electrode(190) on a whole surface of a lower electrode(200).