发明名称 |
Power switching semiconductor component e.g. thyristor, includes basically-etched V-shaped trench structure forming basis for edge zone diffusion process |
摘要 |
A V-shaped trench structure (13) is made by basic etching. This constitutes the basis of the diffusion process for producing the edge zone (11) of the second conductor type. An Independent claim is included for the corresponding method of manufacture.
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申请公布号 |
DE10044960(A1) |
申请公布日期 |
2002.04.04 |
申请号 |
DE20001044960 |
申请日期 |
2000.09.12 |
申请人 |
SEMIKRON ELEKTRONIK GMBH |
发明人 |
HAASE, LUTZ;SICHELSTIEL, WERNER |
分类号 |
H01L29/06;(IPC1-7):H01L29/06;H01L29/73;H01L29/74 |
主分类号 |
H01L29/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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