发明名称 FABRICATION OF SEMICONDUCTOR DEVICES
摘要 <p>Fabrication of microelectronic devices is accomplished using a substrate having a recessed pattern. In one approach, a master form is used to replicate a substrate having a pit pattern. In another approach, the substrate is produced by etching. A series of stacked layers having desired electrical characteristics is applied to the substrate and planarized in a manner that creates electrical devices and connections therebetween. The microelectronic devices can include a series of row and columns and are uesd to store data at their intersection.</p>
申请公布号 WO2002027768(A2) 申请公布日期 2002.04.04
申请号 US2001030296 申请日期 2001.09.27
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