| 摘要 |
PURPOSE: A semiconductor device and its manufacturing method are provided to include an insulated gate field effect transistor(IGFET) having a particular gate electrode insulation structure. CONSTITUTION: A semiconductor device is disclosed including an insulated gate field effect transistor(IGFET) having a gate insulating layer(2), a gate electrode(3), and a source-drain layer(5). The IGFET may include a bird's beak insulating film(4) in a region in which the gate insulating layer(2) overlaps the source-drain layer(5). The bird's beak insulating film(4) may have a thickness that is greater than the gate insulating film(2). In this way, inter-band tunneling may be reduced. A plurality of IGFETs may include bird's beak insulating films having different configurations in accordance with operating conditions of the circuit in which the particular IGFET is included.
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