发明名称 Photomask, method of lithographically structuring a photoresist layer with the photomask, and method of producing magnetic memory elements
摘要 The photomask and the associated method of lithography and mask technique enable production of a regular configuration of resist dots or holes. At least one photomask is a phase mask. The method is useful for the production of magnetic memory components, in particular MRAM memories, having elliptically shaped magnetic memory elements of high density.
申请公布号 US2002039691(A1) 申请公布日期 2002.04.04
申请号 US20010967698 申请日期 2001.09.28
申请人 CZECH GUNTHER;HENKE WOLFGANG;FOLBER CARSTEN 发明人 CZECH GUNTHER;HENKE WOLFGANG;FOLBER CARSTEN
分类号 G03F1/00;G03F7/20;(IPC1-7):G21G5/00;A61N5/00;G03C5/00;G03F9/00 主分类号 G03F1/00
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