发明名称 |
Photomask, method of lithographically structuring a photoresist layer with the photomask, and method of producing magnetic memory elements |
摘要 |
The photomask and the associated method of lithography and mask technique enable production of a regular configuration of resist dots or holes. At least one photomask is a phase mask. The method is useful for the production of magnetic memory components, in particular MRAM memories, having elliptically shaped magnetic memory elements of high density.
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申请公布号 |
US2002039691(A1) |
申请公布日期 |
2002.04.04 |
申请号 |
US20010967698 |
申请日期 |
2001.09.28 |
申请人 |
CZECH GUNTHER;HENKE WOLFGANG;FOLBER CARSTEN |
发明人 |
CZECH GUNTHER;HENKE WOLFGANG;FOLBER CARSTEN |
分类号 |
G03F1/00;G03F7/20;(IPC1-7):G21G5/00;A61N5/00;G03C5/00;G03F9/00 |
主分类号 |
G03F1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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