METHOD FOR FORMING HIGH DENSITY PLASMA INSULATION LAYER

摘要

PURPOSE: A method for forming high density plasma insulation layer is provided to prevent a spot defect due to an argon sputtering by depositing an insulator using an HDP(High Density Plasma) deposition. CONSTITUTION: A semiconductor substrate(21) is chucked on an electrostatic chuck(22) of a high density plasma chamber(20). A helium(He) gases flow at the rear surface of the semiconductor substrate(21), thereby falling the temperature of the semiconductor substrate(21). A high density plasma insulator is deposited on the semiconductor substrate(21) by an HDP deposition. The high density plasma insulator is then cleaned by wet-cleaning.