发明名称 THIN FILM LIGHT RECEIVING ELEMENT
摘要 PURPOSE:To enable the layer element below a photo-transmitting conductive film to be increased in the effective area contributed to photocurrent ganeration by a method wherein generated photo power is collected by forming this conductive film between required adjacent element layers. CONSTITUTION:The photo-transmitting conductive film including the region of superposition of both electrodes and having a region larger than it is formed between a thin film light receiving layer and the thin film light receiving layer adjacent thereto of a thin film light receiving element having a plurality of thin film light receiving layers between opposed upper and lower electrodes. For example, a clear electrode 7 (photo-transmitting conductive film) is inserted into the interface between a p-layer Ic of the first layer element and an n-layer 2a of the second layer element. ITO or a metal (Ti) of 20-30lambda thickness is suitable as the inserted clear electrode. With such a structure, the photocurrent generating in the second layer element 2 is collected also from the part uncovered with the ITO5 on the surface, this element 2 increases in the effective area contributed to photocurrent generation; accordingly, the curve for sensitivity can be increased.
申请公布号 JPS60157270(A) 申请公布日期 1985.08.17
申请号 JP19840012897 申请日期 1984.01.26
申请人 MITSUBISHI DENKI KK 发明人 SATOU KAZUHIKO
分类号 H01L31/04;H01L31/075 主分类号 H01L31/04
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