| 摘要 |
PURPOSE: A contact formation method of semiconductor devices is provided to prevent an oxide stringer due to SAC(Self Aligned Contact) processing and to minimize losses of an active layer. CONSTITUTION: A plurality of gate lines(24) are formed on a semiconductor substrate(21) having a field oxide(22). A nitride spacer(26) is formed at both sidewalls of the gate lines(24). A barrier film(27) is formed on the entire surface of the resultant structure so as to prevent an attack of the field oxide(22). After forming an interlayer dielectric on the resultant structure, an active region of the semiconductor substrate is exposed by SAC processing. The barrier film(27) is then removed by dry etching using NF3/O2 gas.
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