Semiconductor device and method of producing the same

摘要

High-speed and low-power-consuming transistors such as field effect transistors having strained Si channels and hetero-bipolar transistors are integrated with each other. Used here is a complex structure in which an MOSFET (10A) having a thin-film SiGe buffer layer (16A) and a strained Si channel (18A, 18B) are laminated on an insulating film (14) and an HBT (10B) having an SiGe base layer (34) formed on a thin-film SiGe layer (16B) by epitaxial growth and an Si emitter layer (36) formed on the SiGe base layer (34) are combined with each other. The thin-film SiGe layer (16A) formed on the insulating film of the MOSFET (10A) is made thinner than the counterpart (16B) of the HBT (10B). The thin-film SiGe layer (16A) formed on the insulating film of the MOSFET (10A) has Ge concentration higher than that of the counterpart (16B) of the HBT (10B). <IMAGE>