发明名称 Regulated reference voltage circuit for flash memory device and other integrated circuit applications
摘要 A charge pump circuit which generates an output voltage at a selected level, but variations in the current supplied to the charge pump are limited, and variations in the output current generated by the charge pump are limited. The charge pump circuit is coupled to a power supply which has a supply voltage which varies over a specified range. It includes a first charge pump that generates a reference voltage higher than the supply voltage in response to the supply voltage. A circuit, coupled to the first charge pump and responsive to the reference voltage generates a regulated supply voltage. A second charge pump generates a controlled output voltage in response to the regulated supply voltage. The regulated supply voltage is used by pump clock drivers and as a pump reference supply for the second charge pump.
申请公布号 US6366519(B1) 申请公布日期 2002.04.02
申请号 US19960624389 申请日期 1996.04.05
申请人 MACRONIX INTERNATIONAL CO., LTD. 发明人 HUNG CHUN-HSIUNG;LIN TIEN-LER;SOEJIMA KOTA;MATSUBARA SATOSHI
分类号 G11C5/14;G11C16/30;(IPC1-7):G11C13/00 主分类号 G11C5/14
代理机构 代理人
主权项
地址