| 摘要 |
A low temperature process is described for forming a low dielectric constant (k) fluorine and carbon-containing silicon oxide dielectric material for integrated circuit structures. A reactor has a semiconductor substrate mounted on a substrate support which is maintained at a low temperature not exceeding about 25° C., preferably not exceeding about 10° C., and most preferably not exceeding about 0° C. A low k fluorine and carbon-containing silicon oxide dielectric material is formed on the surface of the substrate by reacting together a vaporous source of a mild oxidizing agent, such as a vaporized hydrogen peroxide, and a vaporous substituted silane having the formula (CFmHn)-Si-(R)xHy wherein m is 1-3; n is 3-m; R is an alkyl selected from the group consisting of ethyl (-C2H5), methyl (-CH3), and mixtures thereof; x is 1-3; and y is 3-x.
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